AT-32011-TR2G

Overview

The AT-32011-TR2G is a high-performance NPN silicon bipolar transistor from Broadcom Limited, housed in a SOT-143 surface-mount package. It is optimized for low voltage operation and maximum transition frequency at low currents, making it suitable for battery-powered wireless applications. The device utilizes a self-aligned-transistor process with gold metalization and nitride passivation. Key electrical specifications include a collector-emitter breakdown voltage of 5.5 V, an emitter-base breakdown voltage of 1.5 V, and a continuous collector current rating of 32 mA. Power dissipation is rated at 200 mW, with a junction temperature range of -65°C to +150°C.

Feature Summary

• Optimized for high performance at low voltage and low current levels
• Utilizes a self-aligned-transistor process for excellent uniformity and reliability
• Designed specifically for battery-operated wireless market applications

Applications

• Low noise amplifiers (LNA) in wireless systems
• Gain stages and buffers for RF circuits
• Oscillators and active mixers in battery-powered devices

Procurement Notes

Verify the specific ordering suffix TR2G corresponds to the 10000-unit 13-inch reel configuration as defined in the official datasheet. Confirm that the component remains available through authorized distributors, noting that availability status may change over time. Ensure compliance with RoHS directives by checking the specific manufacturing batch documentation against current environmental regulations.

Selection Notes

Select this component when designing for 900 MHz, 1.8 GHz, or 2.4 GHz bands requiring low noise figures and moderate gain at low bias currents. The SOT-143 package offers higher performance compared to the SOT-23 variant due to improved thermal and electrical characteristics. Consider the 2.7 V optimization for end-of-life battery scenarios in portable consumer electronics.

Part Context

This part belongs to the Avago AT-320xx series of low-current, high-performance NPN bipolar transistors. It shares the same die design as the AT-32033 but is packaged in the SOT-143 format instead of the SOT-23. Both variants are fabricated using the same 10 GHz ft, 30 GHz fMAX self-aligned-transistor process technology.

Replacement Considerations

The AT-32033 serves as a functional equivalent with identical electrical characteristics but is housed in an SOT-23 package. Designers must account for the pinout differences and physical footprint changes when substituting between these two package types.