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The AT-32032-TR1G is a silicon NPN RF bipolar transistor manufactured by Broadcom Limited. Designed for low-current applications, it operates at frequencies up to 2.4 GHz with a minimum DC current gain (hFE) of 70. The device features a maximum collector-emitter voltage (VCEO) of 5.5 V and an emitter-base voltage (VEBO) of 1.5 V. It supports a continuous collector current of 40 mA and dissipates up to 200 mW of power. Packaged in an SOT-323 surface-mount format, it functions as a single transistor within a temperature range of -65°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance details via official documentation before procurement. Ensure storage conditions maintain moisture sensitivity level integrity during handling.
Select this component for designs requiring small-form-factor RF amplification at 2.4 GHz. Verify that the 5.5 V voltage rating and 40 mA current limits align with circuit requirements. Consider the SOT-323 package dimensions for layout compatibility.
This part belongs to Broadcom's portfolio of RF discrete semiconductors. It serves as a specialized component for high-frequency signal processing tasks. The product line focuses on providing reliable performance for wireless connectivity solutions across various industrial and consumer applications.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Broadcom technical support for validated alternatives compatible with the SOT-323 package and 2.4 GHz operational specifications.