AT-32063-TR2G

Overview

The AT-32063-TR2G is a low current, high performance NPN silicon bipolar transistor from Broadcom Limited. It contains two unconnected transistors in an SOT-363 package, optimized for low voltage operation at 2.7 V. Key electrical specifications include a collector-emitter voltage (VCEO) of 5.5 V, emitter-base voltage (VEBO) of 1.5 V, and continuous collector current of 32 mA. Power dissipation is rated at 150 mW with a junction temperature range of -65°C to +150°C. At 900 MHz, it achieves a minimum noise figure of 1.1 dB and associated gain up to 14.5 dB under standard test conditions.

Feature Summary

• Dual unconnected NPN transistors in a single SOT-363 package allow flexible design configurations such as cascode amplifiers.
• Optimized for low current and low voltage battery-operated systems, featuring extremely fast switching and moderate power capabilities.
• Utilizes a self-aligned-transistor process with gold metallization and nitride passivation for excellent device uniformity and reliability.

Applications

• Low Noise Amplifier (LNA) in 900 MHz, 1.8 GHz, and 2.4 GHz systems
• Gain stage or buffer for pager applications operating at 900 MHz
• Oscillator circuits requiring high gain capability at low bias currents
• Active mixer designs in battery-powered wireless devices

Procurement Notes

Verify the component status before integration, as this specific part number may be subject to end-of-life restrictions. Confirm that the SOT-363 tape-and-reel packaging aligns with your automated assembly requirements. Ensure that the manufacturer's datasheet specifications are reviewed for any updates regarding lead-free compliance and RoHS standards prior to final procurement decisions.

Selection Notes

Select this component when designing for low-voltage environments around 2.7 V where minimal noise figure and high gain are critical. The dual unconnected structure provides design flexibility for cascode configurations. Consider the 32 mA current limit and 150 mW power dissipation constraints when determining biasing networks for optimal RF performance across 900 MHz to 2.4 GHz bands.

Part Context

This device belongs to the AT-3 series of bipolar transistors fabricated using Avago’s 10 GHz ft and 30 GHz fmax Self-Aligned-Transistor process. The series is characterized by its 3.2 micron emitter-to-emitter pitch and 20 emitter finger interdigitated geometry, which yield high performance products suitable for multiplicity of tasks in RF applications.

Replacement Considerations

Consult official documentation for direct substitutes. Alternative options within the same family include AT-32063-BLKG and AT-32063-TR1G, which share identical electrical characteristics but differ in packaging quantity and reel size.

FAQ

What is the maximum operating frequency for the AT-32063?

The device is characterized for performance up to 30 GHz fmax, with typical RF applications documented at 900 MHz, 1.8 GHz, and 2.4 GHz.

Can the two transistors in the AT-32063 be connected together?

Yes, the datasheet states that the devices are unconnected, allowing flexibility in design, including convenient pin-outs for cascode amplifier designs.

What is the typical noise figure at 900 MHz?

At 900 MHz with VCE = 2.7 V and IC = 5 mA, the minimum noise figure is typically 1.1 dB, with a maximum specified value of 1.4 dB.