AT-41533-TR2G

Overview

The AT-41533-TR2G is a general-purpose, low-noise NPN silicon bipolar transistor manufactured by Broadcom Limited. It utilizes the same die as the AT-41511 but is housed in a 3-lead SOT-23 surface-mount plastic package. The device is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process with nitride passivation and gold metalization. It is optimized for bias supplies between 5 and 8 volts, though it performs well at 2.7 V. At 900 MHz with a 5 V supply and 5 mA collector current, it achieves a typical noise figure of 1 dB and an associated gain of 14.5 dB. Absolute maximum ratings include a collector-emitter voltage of 12 V, collector current of 50 mA, and power dissipation of 225 mW.

Feature Summary

• General purpose NPN bipolar transistor designed for excellent high-frequency performance
• Optimized for low noise figure and moderate power output in wireless systems
• Utilizes 14 emitter finger interdigitated geometry for easy impedance matching
• Compatible with high-volume surface mount assembly techniques

Applications

• Low noise amplifier (LNA) in wireless systems
• Gain stage in RF circuits
• Buffer applications
• Oscillator circuits
• Active mixer implementations

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The TR2G suffix indicates a 10,000-unit 13-inch reel configuration. Ensure compatibility with standard SMT reflow processes. Confirm RoHS compliance status through official documentation prior to integration into lead-free manufacturing lines.

Selection Notes

Select this component when a compact SOT-23 footprint is required for low-noise amplification tasks. Compare against the AT-41511 if lower parasitic effects are critical, as the AT-41511 uses a 4-lead SOT-143 package. Evaluate bias conditions carefully, as performance varies significantly between 2.7 V, 5 V, and 8 V operating points.

Part Context

This part belongs to the AT-415xx series of general-purpose NPN silicon bipolar transistors. The series includes the AT-41511, which shares the identical semiconductor die but utilizes a different SOT-143 package to reduce parasitics. Both devices are designed to offer economical high-frequency performance for RF applications.

Replacement Considerations

The AT-41511 serves as a functional equivalent utilizing the same die, differing only in the SOT-143 package. Verify pinout compatibility and thermal resistance differences when substituting packages. No other direct cross-model replacements are documented in the provided datasheet.

FAQ

What is the difference between the AT-41533 and AT-41511?

Both devices use the same semiconductor die. The AT-41533 is packaged in a 3-lead SOT-23, while the AT-41511 uses a 4-lead SOT-143 package which offers lower parasitics.

What is the typical noise figure at 900 MHz?

At 900 MHz with a VCE of 5 V and IC of 5 mA, the typical noise figure is 1.0 dB.

Is the device suitable for operation at 2.7 V?

Yes, while optimized for 5 to 8 V bias supplies, the datasheet confirms they are good performers at 2.7 V.