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Product Detailed Parameters
- Description：RF TRANS NPN 12V 8GHZ
- Series：-
- Mfr：Broadcom Limited
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：1.9dB ~ 3dB @ 2GHz ~ 4GHz
- Gain：10dB ~ 13.5dB
- Power - Max：600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 35mA, 8V
- Current - Collector (Ic) (Max)：80mA
- Operating Temperature：200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD (100 mil)
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The AT-42010 is a general-purpose NPN silicon bipolar transistor designed for VHF, UHF, and microwave applications. Fabricated using a 10 GHz fT self-aligned-transistor process with nitride passivation, it features a hermetic gold-ceramic microstrip package. Key electrical specifications include a maximum operating frequency of 6 GHz and a typical gain-bandwidth product of 8.0 GHz. At 2.0 GHz with VCE = 8 V and IC = 35 mA, the device delivers a typical P1 dB of 21.0 dBm and G1 dB of 14.0 dB. The minimum forward current transfer ratio (hFE) is 30 at 35 mA and 8 V. Absolute maximum ratings specify a collector-emitter voltage of 12 V, collector current of 80 mA, and power dissipation of 600 mW.
Feature Summary
- Hermetic gold-ceramic microstrip package ensures high reliability and surface protection via nitride passivation.
- Self-aligned-transistor fabrication process provides excellent device uniformity and performance stability.
- Optimized impedance matching characteristics facilitate low noise and medium power circuit design.
Applications
- Low noise amplifiers
- Wideband amplifiers
- Mixers
- Oscillators
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status to ensure alignment with specific manufacturing lot requirements. Review absolute maximum ratings carefully during system integration to prevent permanent damage from exceeding voltage or thermal limits.
Selection Notes
Select this component for designs requiring stable RF performance up to 6 GHz. Evaluate bias conditions against the specified hFE range and power dissipation constraints. Ensure thermal management strategies account for the junction-to-case thermal resistance when operating near maximum temperature limits.
Part Context
This device belongs to the Avago Technologies silicon bipolar transistor family. It utilizes a 100 mil ceramic package suitable for high-frequency circuits. The technology supports applications demanding consistent gain and noise figure characteristics across wide bandwidths in the VHF and UHF spectrum.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based on generic package types alone. Verify pinout compatibility and electrical parameter overlaps before implementation.
FAQ
What is the typical gain-bandwidth product?
The typical gain-bandwidth product (fT) is 8.0 GHz under test conditions of VCE = 8 V and IC = 35 mA.
What is the optimum noise figure at 2.0 GHz?
The typical optimum noise figure (NFO) is 1.9 dB at 2.0 GHz with VCE = 8 V and IC = 10 mA.
What is the maximum collector-emitter voltage?
The absolute maximum collector-emitter voltage (VCEO) is 12 V.
