AUIRF1324WL

Single FETs, MOSFETs Overview

The AUIRF1324WL is an N-channel enhancement mode power MOSFET from the HEXFET G174/G32 series, designed for automotive applications. It utilizes a Widelead TO-262 package with a maximum drain-source voltage of 24 V and a typical on-resistance of 1.16 mΩ (max 1.30 mΩ). The device supports a continuous drain current of 382 A (silicon limited) or 240 A (package limited) at 25°C case temperature. Key electrical parameters include a gate threshold voltage range of 2.0 V to 4.0 V, total gate charge of 120 nC typ., and a maximum power dissipation of 300 W. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Widelead TO-262 package design providing over 50% lower lead resistance compared to traditional TO-262 packages.
• Advanced process technology delivering ultra-low on-resistance and fast switching speeds.
• Automotive qualified per AEC-Q101 standards with repetitive avalanche rating allowed up to Tjmax.
• Capable of operating at a junction temperature of 175°C.

Single FETs, MOSFETs Applications

• Automotive power management systems
• Low-side switching applications
• High-efficiency power conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm the package type is TO-262 WideLead and ensure the part number prefix matches the automotive grade designation. Cross-reference the manufacturer details with Infineon Technologies documentation to validate the source before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses and high current handling are required in automotive environments. The Widelead package offers thermal advantages over standard TO-262 housings. Ensure the application voltage does not exceed 24 V and consider the 175°C junction temperature capability for high-temperature operation scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents an evolution in automotive-grade silicon carbide and silicon power devices, focusing on efficiency and reliability. The Widelead variant specifically addresses thermal and resistance challenges found in traditional packaging solutions.

Single FETs, MOSFETs Replacement Considerations

Direct replacement requires matching the 24 V rating, TO-262 WideLead package, and similar Rds(on) characteristics. Verify that any substitute also meets AEC-Q101 automotive qualification standards if used in automotive contexts.