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AUIRF6215S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 150V 13A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AUIRF6215S
- Description：MOSFET P-CH 150V 13A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：290mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for AUIRF6215S
Single FETs, MOSFETs Overview
The AUIRF6215S is a P-channel power MOSFET from the Infineon HEXFET series, designed for surface-mount applications in the D2PAK package. It features a drain-source voltage rating of 150 V and a continuous drain current of 13 A at case temperature. The device exhibits a maximum on-resistance of 290 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 66 nC and an input capacitance of 860 pF. It operates within a junction temperature range of -55°C to 175°C and holds AEC-Q101 automotive qualification.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Advanced HEXFET process technology for low conduction losses
- Ruggedized design with fast switching capabilities
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm specific ordering suffixes match required packaging formats such as tube or reel configurations. Ensure compliance with RoHS directives and check for any obsolescence notices given the part status may vary by region.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust P-channel switching in automotive environments. Evaluate thermal management requirements based on the specified power dissipation limits in both ambient and case conditions. Ensure gate drive voltages remain within the ±20 V absolute maximum ratings to prevent device degradation.
Single FETs, MOSFETs Part Context
This device belongs to the Infineon HEXFET family, which utilizes advanced processing techniques to achieve low on-resistance per silicon area. The series combines fast switching speeds with rugged device designs, providing designers with high efficiency and reliability for various power management challenges.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include IRF6215PBF and IRF6215-009PBF for through-hole TO-220AB packages. For surface-mount equivalents, verify pin compatibility and thermal characteristics against other D2PAK P-channel MOSFETs with similar 150V and 290mΩ specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
