AUIRF7303Q

Description：MOSFET 2N-CH 30V 5.3A 8SOIC
Series：HEXFET®

SKU:35743f7884ae Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.3A 8SOIC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.3A
Rds On (Max) @ Id, Vgs：50mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id：3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：515pF @ 25V
Power - Max：2.4W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AUIRF7303Q

Overview

The AUIRF7303Q is an automotive-grade dual N-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.3 A at 25°C. The device offers a low on-resistance of 50 mΩ at VGS=10V and 80 mΩ at VGS=4.5V, supporting logic-level gate drive. It operates within a junction temperature range of -55°C to +175°C with a maximum power dissipation of 2.4 W.

Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Dual N-channel configuration with advanced planar technology
Logic level gate drive capability for efficient control
Fast switching speed with repetitive avalanche energy allowance

Applications

Automotive electronic systems
Cellular design applications requiring ruggedized devices
Low on-resistance power switching circuits

Procurement Notes

Verify the specific ordering suffix (e.g., TR for tape and reel) against the manufacturer's official documentation to ensure correct packaging and quantity specifications. Confirm that the component meets the required automotive qualification standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component when designing automotive circuits requiring a dual N-channel MOSFET with a 30 V rating. Ensure the application supports the specified logic-level gate drive requirements and thermal management capabilities for the SO-8 package. Verify compatibility with the required continuous and pulsed drain current limits under operating conditions.

Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically designed for automotive applications. It utilizes advanced planar technology to achieve low on-resistance per silicon area. The device is lead-free and RoHS compliant, meeting strict environmental and quality standards for the automotive industry.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic replacements may not match the specific automotive qualification or electrical characteristics required for this application.