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The AUIRF7309QTR is an automotive-grade dual N-channel and P-channel HEXFET power MOSFET in an SO-8 package. It features a maximum drain-source voltage of 30V, continuous drain currents of 4.0A (N) and -3.0A (P), and low on-resistance of 50mΩ (N) and 100mΩ (P). The device supports logic-level gate drive, operates up to 150°C junction temperature, and includes dynamic dv/dt rating for rugged performance.
Verify the specific suffix 'TR' indicates tape and reel packaging when ordering. Confirm that the component meets AEC-Q101 qualification requirements for your target automotive application. Ensure thermal management aligns with the specified junction temperature limits during operation.
Select this component for designs requiring integrated N and P channel switching within a compact surface-mount footprint. Consider the 30V breakdown voltage and current ratings against peak load demands. Evaluate the logic-level gate drive compatibility with standard microcontroller output voltages.
This part belongs to Infineon's HEXFET family, utilizing advanced planar technology for low on-resistance. The automotive grade variant ensures reliability under harsh environmental conditions. It serves as a robust solution for power management tasks in vehicle electronics where space and efficiency are critical constraints.
Direct replacement requires verifying pinout compatibility and electrical parameter equivalence. Check if alternative parts meet the same AEC-Q101 qualification level. Ensure the substitute maintains similar switching speeds and thermal characteristics for the intended circuit design.
The AUIRF7309QTR is qualified according to the AEC-Q101 standard for automotive applications.
Yes, the datasheet specifies logic level gate drive capability for both N-channel and P-channel sections.
The maximum operating junction temperature is 150°C.