ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6.5A 8SOIC
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.5A, 4.9A
- Rds On (Max) @ Id, Vgs：29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The AUIRF7319Q is an automotive-grade dual HEXFET Power MOSFET in a surface-mount SO-8 package. It integrates one N-channel and one P-channel enhancement-mode transistor. The N-channel device supports a drain-source voltage of 30V, with a maximum on-resistance of 0.029Ω at VGS=10V and a continuous current rating of 6.5A. The P-channel counterpart features a -30V rating, a maximum on-resistance of 0.058Ω at VGS=-10V, and a continuous current of -4.9A. Both channels are fully avalanche rated.
Feature Summary
- Automotive qualified to AEC-Q101 standards for high reliability
- Advanced planar technology achieves extremely low on-resistance per silicon area
- Logic level gate drive capability for efficient control
- Fully avalanche rated for improved repetitive avalanche energy handling
Applications
- Automotive power management systems
- Motor control applications
- Power distribution circuits
Procurement Notes
Verify the specific suffix (e.g., TR for Tape & Reel) against the required packaging format. Confirm that the component meets the necessary AEC-Q101 qualification levels for the target automotive application. Ensure thermal design accounts for the junction-to-ambient resistance under board-mounted conditions.
Selection Notes
Select this component when a compact dual configuration of N and P-channel MOSFETs is required for automotive environments. The logic-level gate drive simplifies driver circuit design. Evaluate the thermal performance based on the specified junction-to-ambient resistance and expected duty cycles.
Part Context
This part belongs to Infineon's HEXFET family, known for utilizing advanced processing techniques to minimize on-resistance. The dual SO-8 package allows for significant board space reduction compared to discrete single-channel solutions, making it suitable for dense power layouts.
Replacement Considerations
The datasheet lists AUIRF7319QTR as the tape and reel form of the same base component. No other cross-references or substitute part numbers are documented in the provided source material.
