AUIRFR1018E

Description：MOSFET N-CH 60V 56A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:9dd4415dc534 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR1018E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 56A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR1018E

Description：MOSFET N-CH 60V 56A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id：4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2290 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR1018E

AUIRFR1018E

Single FETs, MOSFETs Overview

The AUIRFR1018E is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package and supports junction temperatures up to 175°C. The device provides a drain-to-source breakdown voltage of 60V, with a maximum on-resistance of 8.4mΩ at VGS=10V and ID=47A. Continuous drain current reaches 79A (silicon limited) or 56A (package limited), while pulsed drain current is rated at 315A. Total gate charge is typically 46nC.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for enhanced reliability
Advanced process technology enabling ultra-low on-resistance
Capable of repetitive avalanche operation up to maximum junction temperature
Fast switching characteristics optimized for efficiency

Single FETs, MOSFETs Applications

Automotive power distribution systems
Motor control applications
High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing line. The standard tube configuration is designated as AUIRFR1018E, while tape and reel options include AUIRFR1018ETRL. Confirm that the selected form factor aligns with your automated assembly equipment specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance in a compact surface-mount footprint. Ensure thermal management strategies account for the 1.32°C/W junction-to-case resistance. Verify that gate drive voltages remain within the ±20V limit to maintain safe operating area compliance during high-current switching events.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically engineered for demanding environments. The 'AU' prefix indicates automotive qualification status, distinguishing it from standard industrial variants. It utilizes silicon-based technology optimized for low conduction losses and high thermal stability.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for cross-reference data. Verify pinout compatibility and electrical parameter margins against potential substitute components to ensure circuit functionality remains unaffected during supply chain transitions.