SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AUIRGP4062D-E is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Trench IGBT technology to achieve low saturation voltage and switching losses. The component features a TO-247AD package and supports a collector-emitter voltage of 600V. At a case temperature of 100°C, it provides a continuous collector current of 24A. The device operates within a junction temperature range of -55°C to +175°C and includes a clamped inductive load current rating of 96A.
Verify the specific ordering suffix '-E' corresponds to the TO-247AD package variant rather than the standard TO-247AC. Confirm that the required automotive qualification level meets project specifications, as this part has passed AEC-Q101 testing. Ensure thermal management designs account for the specified junction-to-case resistance values provided in the datasheet.
Select this component when high efficiency across a wide range of switching frequencies is required due to its low VCE(ON). It is suitable for parallel operation because of its positive temperature coefficient. Consider the TO-247AD package constraints, as surface mounting is not recommended. Evaluate the 5µs short-circuit safe operating area against potential fault conditions in the target circuit design.
This device belongs to the AUIRGP series of automotive-grade IGBTs from Infineon Technologies. It is designed to replace previous generations of International Rectifier products while meeting modern automotive reliability standards. The product line emphasizes robustness and efficiency for demanding power electronics environments.
The base part number AUIRGP4062D serves as the functional equivalent but utilizes a TO-247AC package instead of the TO-247AD found in the AUIRGP4062D-E. Verify mechanical footprint compatibility before substitution.
The maximum clamped inductive load current is 96A at a gate-emitter voltage of 20V.
No, the TO-247AD package used by this part number is not recommended for surface mount applications.
The reverse recovery energy of the diode is typically 624 µJ at a junction temperature of 175°C.