AUIRLS3036-7TRL

Description：MOSFET N-CH 60V 240A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:8b8c9a5c30e9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLS3036-7TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 240A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLS3036-7TRL

Description：MOSFET N-CH 60V 240A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.9mOhm @ 180A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：160 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：11270 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：380W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for AUIRLS3036-7TRL

AUIRLS3036-7TRL

Single FETs, MOSFETs Overview

The AUIRLS3036-7TRL is an automotive-grade N-channel HEXFET power MOSFET in a D2Pak 7-pin package. It features a 60V drain-source breakdown voltage and a maximum on-resistance of 1.9mΩ at VGS=10V. The device supports a continuous silicon-limited drain current of 300A and a package-limited current of 240A. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V, total gate charge up to 160nC, and a junction temperature operating range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for reliability.
Logic level gate drive capability optimized for standard control interfaces.
Advanced process technology enabling ultra-low on-resistance per silicon area.
Repetitive avalanche rating allowed up to the maximum junction temperature.

Single FETs, MOSFETs Applications

Automotive power management systems
High-efficiency motor control applications
Low-loss DC-DC conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the tape and reel form factor. Confirm that the component meets the required AEC-Q101 qualification level for your target application environment. Ensure compatibility with the specified D2Pak 7-pin footprint during PCB layout validation.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical for system efficiency. The logic-level gate drive simplifies driver circuit design by allowing direct interfacing with standard voltage levels. Consider the thermal resistance characteristics and package limitations when designing for high-current continuous operation scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve high performance within a compact surface-mount package. The product line is designed to meet the rigorous demands of automotive electronics while maintaining industrial robustness.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or generic specifications without cross-referencing datasheet parameters.