BA 892-02V E6327

RF Diode Overview

The BA 892-02V E6327 is a silicon RF switching diode manufactured by Infineon Technologies, designed for band switching in TV/VTR tuners and mobile applications. It features a single configuration in the SC79 package with an inductance of 0.6 nH. Key electrical parameters include a maximum reverse voltage (VR) of 35 V, a forward current (IF) of 100 mA, and a junction temperature rating up to 150 °C. The device exhibits low forward resistance, typically 0.45 Ω at 3 mA, and small capacitance values ranging from 0.6 pF to 1.1 pF depending on bias conditions. It complies with RoHS standards and is qualified according to AEC Q101.

RF Diode Feature Summary

• Designed for band switching in TV/VTR tuners and mobile applications
• Features very low forward resistance for efficient signal handling
• Small capacitance characteristics suitable for high-frequency operations
• Qualified according to AEC Q101 automotive standards

RF Diode Applications

• Band switching in TV tuners
• Band switching in VTR tuners
• Mobile application RF circuits

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required package and marking. Check for end-of-life status as availability may be limited. Ensure compliance with RoHS directives if required for the target market. Validate thermal resistance specifications against the final PCB layout design.

RF Diode Selection Notes

Select this component when low forward resistance and small capacitance are critical for RF switching performance. Consider the SC79 package dimensions for PCB footprint constraints. Evaluate the 35 V reverse voltage rating against peak circuit voltages. Compare insertion loss and isolation characteristics at operating frequencies against alternative PIN diodes. Verify AEC Q101 qualification if the application demands automotive reliability standards.

RF Diode Part Context

The BA 892-02V belongs to the BA892 series of silicon RF switching diodes from Infineon Technologies. This series includes variants like the BA592 and BA892-02L, differing primarily in package type and inductance values. The BA892-02V specifically utilizes the SC79 package, offering a balance between low parasitic inductance and standard surface-mount compatibility for tuner applications.

RF Diode Replacement Considerations

BA 892-02L E6327: Similar electrical performance but uses TSLP-2-1 package with lower inductance (0.4 nH). BA 892 H6433: Alternative variant within the same family, potentially different packaging or marking. Verify pinout compatibility and thermal characteristics before substitution.