RF Diode BA 892 L6327 product image

BA 892 L6327

$0.04
  • Description:RF DIODE STANDARD 35V SCD80
  • Series:-

SKU:a45c90cac0f3 Category: Brand:

  
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BA 892 L6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE STANDARD 35V SCD80. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BA 892 L6327

  • Description:RF DIODE STANDARD 35V SCD80
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Standard - Single
  • Voltage - Peak Reverse (Max):35V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:1.1pF @ 3V, 1MHz
  • Resistance @ If, F:500mOhm @ 10mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-80
  • Supplier Device Package:SCD-80
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BA 892 L6327

BA 892 L6327

RF Diode Overview

The BA 892 L6327 is a silicon PIN diode manufactured by Infineon Technologies, designed for RF switching applications. It features a maximum reverse voltage of 35 V and a forward current rating of 100 mA. The device exhibits a typical capacitance of 1.1 pF at 3 V and 1 MHz, with a series resistance of 500 mOhms at 10 mA and 100 MHz. Packaged in the PG-TSLP-2-1 (SOD-882) format, it supports junction temperatures up to 150°C and operates within a temperature range of -55°C to +150°C.

RF Diode Feature Summary

  • Optimized for band switching in TV, VTR tuners, and mobile communication applications
  • Provides very low forward resistance characteristics for efficient signal routing
  • Maintains small capacitance values to minimize signal loss in RF paths

RF Diode Applications

  • Band switching circuits in television and video tuner modules
  • RF signal routing in mobile communication devices
  • Switching networks in satellite receiver systems

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm RoHS compliance status against current regulatory requirements. Check datasheet revisions to ensure parameter consistency with design specifications. Validate package marking codes against official Infineon documentation to prevent counterfeit substitution.

RF Diode Selection Notes

Select this component when low parasitic capacitance and high isolation are required in RF switching paths. Ensure the 35 V reverse voltage rating exceeds peak circuit voltages. Verify that the PG-TSLP-2-1 footprint matches the PCB layout constraints. Consider thermal management capabilities if operating near the upper junction temperature limit.

RF Diode Part Context

This part belongs to the BA892 family of silicon RF switching diodes from Infineon. It shares functional similarities with the BA592 and BA892-02V variants but differs in packaging and specific electrical tolerances. The family is engineered for compact surface-mount implementations in consumer electronics and telecommunications hardware requiring reliable RF signal control.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers for the BA 892 L6327 were not identified in available documentation. Designers should consult official Infineon selection guides for equivalent PIN diodes with matching electrical parameters and compatible package footprints.

BA 892 L6327BA 892 L6327
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