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The BA679S-GS18 is a single RF PIN diode manufactured by Vishay General Semiconductor - Diodes Division. It is housed in the MiniMELF SOD-80 surface-mount package. The device features a minimum breakdown voltage of 30 V and a nominal diode capacitance of 0.5 pF. At a test frequency of 100 MHz, the maximum forward resistance is specified at 8000 Ω. The component is qualified to AEC-Q101 standards for automotive applications and supports an operating temperature range up to 125 °C.
Verify the specific suffix GS18 corresponds to the required 10K per 13-inch reel packaging configuration. Confirm that the 8000 Ω maximum forward resistance meets circuit requirements, as this variant differs from the standard BA679 which specifies 5000 Ω. Ensure compatibility with tin/lead terminal plating if lead-free alternatives are not acceptable for the assembly process.
Select the BA679S over the standard BA679 when higher forward resistance is acceptable or required for specific impedance matching. Verify that the 30 V breakdown voltage and 0.5 pF capacitance align with the target RF frequency range. Check material categorization compliance documentation for definitions of environmental adherence before final integration into the design.
This component belongs to the Vishay BA679 series of RF PIN diodes designed for high-frequency signal control. The S designation indicates a variation in forward resistance characteristics compared to the base model. These devices utilize the MiniMELF SOD-80 package to provide compact solutions for space-constrained PCB layouts while maintaining performance in RF switching and attenuation roles.
Public confirmed substitute part numbers were not identified in the provided source data.