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Product Detailed Parameters
- Description：RF DIODE PIN 35V SOD-80 MINIMELF
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：35V
- Current - Max：100 mA
- Capacitance @ Vr, F：1.25pF @ 3V, 100MHz
- Resistance @ If, F：500mOhm @ 10mA, 200MHz
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Package / Case：DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package：SOD-80 MiniMELF
- Grade：-
- Qualification：-
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Overview
The BA682-GS18 is a silicon planar band switching diode manufactured by Vishay Semiconductors in the MiniMELF SOD-80 package. It features a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA. The device exhibits low dynamic forward resistance, with a maximum value of 0.7 Ω at 3 mA forward current and 100 MHz frequency. Diode capacitance is specified at 1.5 pF (typical) at 100 MHz with 1 V reverse bias. Thermal characteristics include a junction temperature limit of 150 °C and a storage range from -55 °C to +150 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Low dynamic forward resistance optimized for RF signal paths
- Low diode capacitance ensuring minimal signal distortion
- High reverse impedance for effective isolation
Applications
- Band switching circuits in VHF tuners
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging configuration. The GS18 suffix indicates tape and reel packaging containing 10,000 units per 13-inch reel. Confirm mechanical compatibility with the MiniMELF SOD-80 footprint before integration into the design.
Selection Notes
Select the BA682-GS18 when low dynamic forward resistance is critical for high-frequency switching applications. Ensure the circuit operates within the 35 V reverse voltage limit and 100 mA forward current constraints. Consider the BA683 variant if a higher dynamic resistance threshold is acceptable for cost or availability reasons.
Part Context
The BA682 belongs to Vishay's band switching diode family designed for RF applications. It is functionally paired with the BA683, which shares identical electrical ratings except for a higher maximum dynamic forward resistance of 1.2 Ω. Both devices utilize the same MiniMELF SOD-80 case and are intended for similar tuner switching roles.
Replacement Considerations
The BA683 serves as a direct functional substitute within the same series, distinguished only by its relaxed dynamic forward resistance specification. Verify that the increased resistance value remains within the system's performance margins before substitution.
