BA683-GS08

Overview

The BA683-GS08 is a silicon planar band switching diode manufactured by Vishay General Semiconductor - Diodes Division. It is housed in the MiniMELF SOD-80 surface-mount package and holds AEC-Q101 automotive qualification. The device features a maximum reverse voltage (VR) of 35 V and supports a continuous forward current (IF) of 100 mA. Key electrical parameters include a maximum forward voltage of 1000 mV at 100 mA, a reverse current of 50 nA at 20 V, and a diode capacitance of 1.2 pF at 1 V and 100 MHz. Dynamic forward resistance is specified as 1.2 Ω at 3 mA and 0.9 Ω at 10 mA, both measured at 200 MHz.

Feature Summary

• Low dynamic forward resistance for efficient signal handling
• Low diode capacitance to minimize signal loss
• High reverse impedance for improved isolation

Applications

• Band switching in VHF-tuners

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the ordering suffix GS08 corresponds to the 2.5K tape and reel packaging format. Ensure compliance with RoHS and material categorization requirements before integration into production lines.

Selection Notes

Select the BA683-GS08 when a higher dynamic forward resistance compared to the BA682 variant is acceptable within the circuit design constraints. Verify that the 35 V reverse voltage rating aligns with the peak operating voltages of the target application environment.

Part Context

This component belongs to the BA68x series of silicon planar band switching diodes from Vishay Semiconductors. The series includes variants such as the BA682, which offers lower dynamic forward resistance. All models share the MiniMELF SOD-80 case and are designed for high-frequency switching applications requiring low capacitance.

Replacement Considerations

The BA682-GS08 serves as a functional substitute within the same family, offering identical packaging and ratings but with a lower dynamic forward resistance specification.