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Product Detailed Parameters
- Description：RF DIODE PIN 35V SOD-80 MINIMELF
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：35V
- Current - Max：100 mA
- Capacitance @ Vr, F：1.2pF @ 3V, 100MHz
- Resistance @ If, F：900mOhm @ 10mA, 200MHz
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Package / Case：DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package：SOD-80 MiniMELF
- Grade：-
- Qualification：-
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Overview
The BA683-GS18 is a silicon planar band switching diode manufactured by Vishay Semiconductors in the MiniMELF SOD-80 package. It features a reverse voltage rating of 35 V and a forward continuous current capability of 100 mA. At a forward current of 3 mA, the dynamic forward resistance is limited to a maximum of 1.2 Ω. The device exhibits low diode capacitance, measuring 1.2 pF at 100 MHz with 3 V reverse bias. Operating junction temperature extends up to 150 °C, with storage ranging from -55 °C to +150 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Low dynamic forward resistance optimized for RF switching
- MiniMELF glass encapsulation for compact surface mounting
Applications
- Band switching in VHF tuners
Procurement Notes
Verify the specific ordering suffix GS18 corresponds to tape and reel packaging containing 10,000 units per 13-inch reel. Confirm that the component meets RoHS compliance definitions under Directive 2011/65/EU. Ensure material categorization aligns with JEDEC JS709A halogen-free requirements before finalizing procurement specifications.
Selection Notes
Select the BA683 variant when a higher dynamic forward resistance threshold of 1.2 Ω is acceptable compared to the BA682's 0.7 Ω limit. Verify that the MiniMELF SOD-80 footprint matches the target PCB design constraints. Validate thermal performance against the specified junction-to-ambient thermal resistance on standard printed circuit boards.
Part Context
This component belongs to the Vishay BA682 and BA683 series of band switching diodes designed specifically for radio frequency applications. The series utilizes silicon planar technology housed in a QuadroMELF or MiniMELF case structure. These devices are engineered to provide high reverse impedance and low capacitance characteristics essential for precise signal path control in tuner circuits.
Replacement Considerations
The BA682 serves as a direct functional alternative within the same series, distinguished primarily by its lower dynamic forward resistance specification of 0.7 Ω compared to the BA683's 1.2 Ω limit. Both share identical electrical ratings and mechanical packaging dimensions.
