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The BA779-2-HG3-08 is a PIN diode from Vishay General Semiconductor, designed for RF applications with a reverse voltage of 30V and maximum current of 50 mA. It features ultra-low capacitance of 0.5pF at 0V/100MHz and series resistance of 50 Ohms at 1.5mA/100MHz. Qualified to AEC-Q101 standards, it operates in a wide frequency range from 10 MHz to 1 GHz. The device is housed in an SOT-23-3 package, supporting surface mount technology.
Verify the specific suffix HG3-08 confirms automotive grade and green compliance. Confirm SOT-23-3 footprint compatibility during PCB layout. Check datasheet for thermal derating curves if operating near maximum limits. Ensure supply chain sources provide original manufacturer documentation for AEC-Q101 certification validation.
Select this component when low capacitance is critical for signal fidelity above 10 MHz. The 30V reverse rating suits standard RF biasing needs. Consider the 50 Ohm series resistance for impedance matching requirements. The AEC-Q101 qualification makes it suitable for harsh automotive environments compared to commercial-grade alternatives.
This part belongs to Vishay's BA779 series of RF PIN diodes. It is specifically the dual-diode variant (BA779-2) configured for series connection within a single SOT-23-3 package. This configuration allows for compact design in balanced mixer or switch topologies requiring matched characteristics.
The device supports a wide frequency range up to 1 GHz.
Yes, it is AEC-Q101 qualified.