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The BA782-G3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors. It operates in the frequency range of 50 to 1000 MHz with a maximum reverse voltage of 35 V and a continuous forward current of 100 mA. The device features low dynamic forward resistance, typically 0.7 Ω at 3 mA and 0.5 Ω at 10 mA within the operating band. Diode capacitance is 1.5 pF at 1 V and 1.25 pF at 3 V (1 MHz). Packaged in an SOD-123 case, it supports an operating temperature range from -55 °C to +125 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and material categorization details against current Vishay documentation. Ensure storage conditions remain within specified limits to maintain junction integrity prior to assembly.
Select this component when low dynamic forward resistance and stable capacitance are required for high-frequency bandswitching applications. Verify that the 35 V reverse voltage rating meets circuit requirements. Consider the SOD-123 package dimensions for PCB layout constraints.
This part belongs to the BA782-G series of band switching diodes. It shares the same electrical characteristics as the non-green variant but complies with environmental standards. The suffix '18' indicates tape and reel packaging configuration.
BA783-G3-18 offers similar functionality with slightly different dynamic forward resistance values.