BA783-HE3-08

RF Diode Overview

The BA783-HE3-08 is a silicon epitaxial planar band switching diode designed for radio and TV tuners operating between 50 MHz and 1000 MHz. It features a maximum reverse voltage of 35 V and a continuous forward current of 100 mA. The device exhibits low dynamic forward resistance, measuring 1.2 Ω at 3 mA and 0.9 Ω at 10 mA within the operational frequency range. Diode capacitance is specified at 1.2 pF at 3 V reverse bias. The component is housed in an SOD-123 package with a series inductance of 2.5 nH.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability
• RoHS-compliant and halogen-free construction
• Low dynamic forward resistance across wide frequency range
• Small reverse capacitance largely independent of reverse voltage

RF Diode Applications

• Band switching in radio tuners
• Band switching in TV tuners
• RF signal routing in high-frequency circuits

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm the packaging format. The -08 designation indicates tape and reel packaging on a 7-inch reel containing 3000 units per box. Confirm RoHS compliance status and AEC-Q101 qualification requirements against the project specifications before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing RF switching applications requiring operation up to 1000 MHz. Ensure the circuit design accommodates the 35 V reverse voltage limit and 100 mA forward current rating. Consider the 1.2 pF capacitance value for impedance matching in tuner circuits where minimal signal attenuation is required.

RF Diode Part Context

This part belongs to the BA78x series of band switching diodes manufactured by Vishay Semiconductors. The HE3 suffix denotes a lead-free, halogen-free variant that meets AEC-Q101 standards. It shares the same electrical characteristics as the commercial grade BA783-E3 variants but offers enhanced reliability for automotive environments.

RF Diode Replacement Considerations

The BA782-HE3-08 serves as a direct functional substitute within the same family. While sharing identical voltage and current ratings, the BA782 exhibits lower dynamic forward resistance (0.7 Ω at 3 mA) and slightly higher capacitance (1.25 pF). Verify these parameter differences against the specific RF performance requirements of the target application.

RF Diode FAQ

What is the maximum operating frequency for the BA783-HE3-08?

The datasheet specifies the device is suitable for electric bandswitching in the frequency range of 50 MHz to 1000 MHz.

How does the dynamic forward resistance vary with current?

At a forward current of 3 mA, the dynamic forward resistance is typically 1.2 Ω. At 10 mA, it decreases to 0.9 Ω within the 50 to 1000 MHz frequency range.

Is the BA783-HE3-08 suitable for automotive applications?

Yes, the HE3 suffix indicates that the component is AEC-Q101 qualified, making it suitable for automotive electronic systems.