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Product Detailed Parameters
- Description：RF DIODE PIN 35V SOD-323
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：35V
- Current - Max：100 mA
- Capacitance @ Vr, F：1.2pF @ 3V, 1MHz
- Resistance @ If, F：1.2Ohm @ 3mA, 1GHz
- Power Dissipation (Max)：-
- Operating Temperature：125°C (TJ)
- Package / Case：SC-76, SOD-323
- Supplier Device Package：SOD-323
- Grade：-
- Qualification：-
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Overview
The BA783S-E3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors. It operates within the 50 to 1000 MHz frequency range and is housed in an SOD-323 surface-mount package weighing approximately 4.3 mg. The device supports a maximum reverse voltage of 35 V and a continuous forward current of 100 mA, with a junction temperature limit of 125 °C. Electrical characteristics include a typical dynamic forward resistance of 1.2 Ω at 3 mA and 0.9 Ω at 10 mA across the operating frequency band. Diode capacitance is specified at 1.2 pF at 1 MHz with 3 V reverse bias.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Low dynamic forward resistance maintained across wide frequency and current ranges
- Reverse capacitance remains small and largely independent of reverse voltage
Applications
- Bandswitching in radio tuners
- Bandswitching in TV tuners
- RF signal routing in the 50 to 1000 MHz range
Procurement Notes
Verify compliance with RoHS directives and material categorization requirements before procurement. Confirm that the ordering suffix -E3-18 corresponds to the specific tape and reel packaging configuration required for automated assembly processes. Ensure technical parameters are validated against specific application conditions prior to finalizing orders.
Selection Notes
Select this component when low dynamic forward resistance and stable capacitance are critical for frequencies between 50 and 1000 MHz. The SOD-323 package is suitable for space-constrained designs requiring AEC-Q101 qualification. Verify that the 35 V reverse voltage rating meets the peak operational requirements of the target circuit.
Part Context
This part belongs to the BA782S/BA783S series of band switching diodes designed specifically for RF applications. The BA783S variant is distinguished from the BA782S by its higher dynamic forward resistance values while maintaining similar structural and thermal characteristics within the same SOD-323 footprint.
Replacement Considerations
Direct substitutes within the same series include the BA782S-E3-18. Note that the BA782S exhibits lower dynamic forward resistance (0.7 Ω at 3 mA) compared to the BA783S (1.2 Ω at 3 mA). Verify if the lower resistance of the BA782S aligns with the specific performance requirements of the design.
FAQ
What is the typical diode capacitance for the BA783S at 1 MHz?
The typical diode capacitance for the BA783S is 1.2 pF when measured at 1 MHz with a 3 V reverse bias.
How does the dynamic forward resistance vary with forward current?
The dynamic forward resistance decreases as forward current increases; it is typically 1.2 Ω at 3 mA and 0.9 Ω at 10 mA across the 50 to 1000 MHz frequency range.
Is the BA783S-E3-18 suitable for automotive applications?
Yes, the device is AEC-Q101 qualified, indicating it meets the reliability standards required for automotive electronic components.
