BA783S-G3-18

Overview

The BA783S-G3-18 is a single PIN diode manufactured by Vishay General Semiconductor - Diodes Division, designed for radio frequency applications. It is housed in the SOD-123 surface-mount package. The device supports a maximum peak reverse voltage of 35 V and a maximum forward current of 100 mA. Key electrical characteristics include a capacitance of 1.2 pF at 3 V and 1 MHz, and a resistance of 1.2 Ohms at 3 mA and 1 GHz. The component operates within a junction temperature range up to 125°C and complies with RoHS 3 standards.

Feature Summary

• Utilizes PIN diode technology optimized for RF signal processing
• Provides low capacitance performance suitable for high-frequency circuits
• Features a compact SOD-123 surface-mount footprint for space-constrained designs

Applications

• RF switching circuits
• Attenuator modules
• Phase shifters

Procurement Notes

Verify the specific suffix against official documentation to confirm package and compliance details. Confirm availability status as distribution data may vary. Ensure the sourcing channel provides authentic components from Vishay General Semiconductor - Diodes Division to maintain reliability.

Selection Notes

Select this component when a single PIN diode in an SOD-123 package is required for RF applications. Consider the 35 V reverse voltage and 100 mA current limits during circuit design. Evaluate the 1.2 pF capacitance specification to ensure compatibility with the target operating frequency.

Part Context

This part belongs to the BA78x series of RF PIN diodes from Vishay. It shares the SOD-123 packaging with variants like the BA783-E3-08 but carries specific suffixes indicating tape-and-reel packaging and RoHS 3 compliance. The series is distinct from standard rectifier or Zener diodes offered by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.