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BA89202VH6127XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE STANDARD 35V SC79-2. Review the specifications below when checking this part for your BOM.
The BA89202VH6127XTSA1 is a silicon RF switching diode from the BA892 series, manufactured by Infineon Technologies. It features a single configuration in an SC79 package with a maximum reverse voltage of 35 V and a forward current rating of 100 mA. The junction temperature range extends up to 150 °C, while the operating temperature spans from -55 °C to 125 °C. Electrical characteristics include a typical forward resistance of 0.45 Ω at 3 mA and a maximum diode capacitance of 1.4 pF at 0 V reverse bias and 100 MHz frequency.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required SC79 package and leadless configuration. Ensure compliance with RoHS directives and check for any specific automotive qualification requirements relevant to the target application environment.
Select this component when a single-pin RF switch with low insertion loss is required. Consider the 35 V reverse voltage limit and 100 mA forward current capability against circuit demands. Evaluate the thermal resistance and operating temperature range to ensure suitability for the intended environmental conditions and power dissipation levels.
This part belongs to the BA892 series of silicon RF switching diodes produced by Infineon Technologies. The series includes variants such as BA592, BA892-02L, and BA892-02V, which share similar electrical characteristics but differ in package types like SOD323, SCD80, TSLP-2-1, and SC79. The BA89202VH6127XTSA1 specifically utilizes the SC79 package format.
Direct substitutes within the same family include BA892-02L (TSLP-2-1 package) and BA892 (SCD80 package). Verify pin compatibility and package dimensions before substitution. Cross-reference electrical parameters such as capacitance and forward resistance to ensure equivalent performance in the specific RF application.
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