BAP1321-02,115

RF Diode Overview

The BAP1321-02 is a silicon PIN diode designed for RF applications up to 3 GHz. It features high voltage and current control capabilities with low diode capacitance and forward resistance. The device operates within a continuous reverse voltage of 60 V and a continuous forward current of 100 mA, dissipating up to 715 mW at junction temperatures up to 150 °C. Electrical characteristics include a typical forward voltage of 0.95 V at 50 mA and a maximum reverse leakage current of 100 nA at 60 V. Diode capacitance ranges from 0.25 pF to 0.45 pF depending on reverse bias. Forward resistance varies from 0.85 Ω to 5.0 Ω based on current levels. Isolation reaches 16.3 dB at 900 MHz, while insertion loss is as low as 0.08 dB at 900 MHz with 100 mA forward current.

RF Diode Feature Summary

• High voltage and current controlled operation suitable for robust RF switching
• Ultra-small SOD523 surface-mount package minimizing board space
• Very low series inductance and diode capacitance for high-frequency performance

RF Diode Applications

• RF attenuators
• RF switches

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details. The provided datasheet references the SOT629-1 package variant. Confirm that the component status aligns with current production requirements before finalizing procurement plans.

RF Diode Selection Notes

Select this component for designs requiring ultra-small form factors and high-speed RF signal control. Ensure the operating frequency remains within the 3 GHz limit. Verify that the required isolation and insertion loss specifications are met by the available forward current drive levels.

RF Diode Part Context

This silicon PIN diode belongs to NXP's portfolio of planar diodes intended for compact electronic designs. It utilizes a plastic SMD package to facilitate automated assembly processes while maintaining electrical integrity in high-frequency circuits.

RF Diode Replacement Considerations

Consult official NXP documentation for confirmed substitute part numbers. Cross-referencing requires matching package type, pin configuration, and electrical limits to ensure functional compatibility.

RF Diode FAQ

What is the maximum continuous reverse voltage rating?

The maximum continuous reverse voltage (VR) is rated at 60 V.

How does the diode capacitance vary with reverse voltage?

Capacitance decreases as reverse voltage increases, ranging from approximately 0.45 pF at 1 V to 0.32 pF at 20 V.

What is the thermal resistance from junction to soldering point?

The thermal resistance (Rth j-s) is specified as 85 K/W.