RF Diode BAP50-03,115 product image

BAP50-03,115

$0.24
  • Description:RF DIODE PIN 50V 500MW SOD-323
  • Series:-

SKU:23bc6a28645a Category: Brand:

  
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BAP50-03,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 500MW SOD-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP50-03,115

  • Description:RF DIODE PIN 50V 500MW SOD-323
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.35pF @ 5V, 1MHz
  • Resistance @ If, F:5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):500 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:SOD-323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP50-03,115

BAP50-03,115

RF Diode Overview

The BAP50-03 is a general-purpose silicon PIN diode housed in an SOD323 (SC-76) surface-mounted package. It features low diode capacitance and low forward resistance, making it suitable for RF applications. Key electrical characteristics include a maximum reverse voltage of 50 V and a forward current rating of 50 mA. At 25 °C, the typical forward voltage is 0.95 V at 50 mA, while reverse leakage current remains below 100 nA at 50 V. Diode capacitance ranges from 0.2 pF to 0.4 pF depending on bias conditions. The device supports a junction temperature range of -65 °C to +150 °C with a total power dissipation limit of 500 mW.

RF Diode Feature Summary

  • Low diode capacitance for high-frequency signal integrity
  • Low diode forward resistance for efficient switching

RF Diode Applications

  • General RF applications

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details and availability status. Ensure the component meets the required automotive or industrial qualification standards if applicable, as standard versions may lack specific certifications. Cross-reference the marking code A8 with the cathode indicator to validate authenticity upon receipt.

RF Diode Selection Notes

Select this component for circuits requiring small form factor PIN diodes with minimal parasitic capacitance. Evaluate the thermal resistance of 85 K/W for heat dissipation requirements in dense PCB layouts. Confirm that the 50 V reverse voltage and 50 mA forward current limits align with the system's operational stress margins.

RF Diode Part Context

This part belongs to the BAP series of general-purpose PIN diodes manufactured by NXP Semiconductors. It shares functional similarities with other members like the BAP51-03 but differs in specific package or parameter variations. The SOD323 package provides a compact solution for surface-mount assembly processes.

RF Diode Replacement Considerations

Direct substitutes include the BAP51-03 and BAP51-05W from NXP, which share similar PIN diode functionality. Verify pinout compatibility and electrical parameters before substitution.

BAP50-03,115BAP50-03,115
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