BAP50LX,315

RF Diode Overview

The BAP50LX,315 is a single PIN diode manufactured by NXP USA Inc., housed in an SOD-882 surface-mount package. It features a maximum reverse voltage of 60 V and a maximum forward current of 100 mA with a typical forward voltage of 1.1 V. The device exhibits a maximum capacitance of 0.4 pF and a series resistance of 1.5 Ω at 100 mA. Designed for S-band applications, it operates within a temperature range of -65 °C to +150 °C.

RF Diode Feature Summary

• Single configuration optimized for attenuator and switching functions
• Low capacitance design suitable for high-frequency signal processing
• Compact SOD-882 footprint for space-constrained PCB layouts

RF Diode Applications

• RF attenuators
• Switching circuits
• S-band signal processing

RF Diode Procurement Notes

Verify the specific ordering code BAP50LX,315 against official NXP documentation to confirm pinout and electrical characteristics. Ensure compatibility with SOD-882 mounting requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into production designs.

RF Diode Selection Notes

Select this component for applications requiring low capacitance and fast switching in the S-band frequency range. Consider the 60 V reverse voltage rating and 100 mA forward current limits when designing bias circuits. Evaluate thermal performance given the operating temperature range up to +150 °C.

RF Diode Part Context

This part belongs to the NXP BAP50 series of PIN diodes, designed for RF and microwave applications. The series offers various configurations tailored for attenuation and switching needs. The BAP50LX variant specifically utilizes the SOD-882 package for compact implementation.

RF Diode Replacement Considerations

Consult NXP documentation for direct substitutes within the BAP50 family. Verify pinout compatibility and electrical parameters such as capacitance and breakdown voltage before replacing with other manufacturers' components.