BAP51LX,315

RF Diode Overview

The BAP51LX,315 is a single PIN diode manufactured by NXP. It features a maximum reverse voltage of 60V and a maximum forward current of 100mA. The device operates within a temperature range of -65°C to +150°C. Key electrical parameters include a typical carrier lifetime of 0.55µs, a maximum forward voltage of 1.1V, and a maximum diode capacitance of 0.4pF. The series resistance is specified as 1.5Ω at 100mA. It is housed in an SOD-882 surface-mount package with dimensions of 1.02mm x 0.62mm x 0.47mm.

RF Diode Feature Summary

• Designed for high-frequency attenuation and switching applications
• Utilizes silicon technology for reliable performance
• Optimized for low parasitic capacitance

RF Diode Applications

• Attenuator circuits
• Switching applications

RF Diode Procurement Notes

Verify the specific ordering code BAP51LX,315 against official NXP documentation to confirm the exact suffix designation and packaging details. Ensure compatibility with SOD-882 footprint requirements during procurement planning.

RF Diode Selection Notes

Select this component when a single PIN diode with 60V reverse voltage capability is required. Consider the 0.55µs carrier lifetime and 0.4pF capacitance for S-band frequency operations. Verify thermal limits against the -65°C to +150°C operating range.

RF Diode Part Context

This part belongs to the NXP PIN diode family, specifically engineered for RF signal control. It serves as a discrete semiconductor solution for managing signal paths in electronic systems requiring precise attenuation or switching functions.

RF Diode Replacement Considerations

Consult NXP datasheets for direct equivalents. Verify pinout compatibility and electrical specifications such as breakdown voltage and capacitance before substituting with other manufacturers' components.