RF Diode BAP70-04W,115 product image

BAP70-04W,115

$0.18
  • Description:RF DIODE PIN 50V 260MW SC-70
  • Series:-

SKU:1211cc4090ae Category: Brand:

  
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BAP70-04W,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP Semiconductors. Its product description is RF DIODE PIN 50V 260MW SC-70. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP70-04W,115

  • Description:RF DIODE PIN 50V 260MW SC-70
  • Series:-
  • Mfr:NXP Semiconductors
  • Package:Bulk
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.3pF @ 20V, 1MHz
  • Resistance @ If, F:1.9Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):260 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP70-04W,115

BAP70-04W,115

RF Diode Overview

The BAP70-04W is a silicon PIN diode featuring two planar diodes in series configuration, housed in an SOT323 (SC-70) plastic surface-mounted package. It is designed for high-voltage current control RF resistor applications. The device supports a continuous reverse voltage of 50 V and a continuous forward current of 100 mA. Key electrical characteristics include a maximum reverse current of 100 nA at 50 V, a typical diode capacitance of 600 fF at 0 V reverse bias, and a charge carrier lifetime of 1.25 µs. Thermal resistance from junction to solder point is typically 230 K/W.

RF Diode Feature Summary

  • High-voltage current control capability suitable for RF attenuators
  • Low diode capacitance and low series inductance
  • Qualified for automotive applications under AEC-Q101 standards

RF Diode Applications

  • RF attenuators
  • RF switches

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details such as reel size or tape width. Ensure that the procurement channel provides valid traceability records. Confirm compliance with RoHS directives and check for any regional export control restrictions applicable to this component before finalizing orders.

RF Diode Selection Notes

Select the BAP70-04W when designing circuits requiring high-voltage current-controlled RF resistance within a compact SOT323 footprint. Consider its low parasitic inductance and capacitance for high-frequency signal paths. Verify that the required operating temperature range aligns with the specified -65 °C to +150 °C limits for both storage and junction temperatures.

RF Diode Part Context

This component belongs to the BAP70 series of silicon PIN diodes manufactured by NXP Semiconductors. It shares the same internal structure and pinout as the BAP70-05 but differs in specific electrical ratings and qualification status. Both devices utilize the SOT323 package and are intended for similar RF switching and attenuation roles.

RF Diode Replacement Considerations

The BAP70-05 is a confirmed substitute part number with identical physical dimensions and pin configuration. Verify that the electrical parameters of the replacement meet the specific circuit requirements, particularly regarding breakdown voltage and capacitance values.

BAP70-04W,115BAP70-04W,115
$0.18
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