BAR 63-02W E6127

RF Diode Overview

The BAR 63-02W E6127 is a silicon PIN diode manufactured by Infineon Technologies, designed for RF switching applications up to 3GHz. It features a peak reverse voltage of 50V and a maximum forward current of 100 mA. The device exhibits a maximum capacitance of 0.3pF at 5V reverse bias and 1MHz frequency, alongside a series resistance of 1 Ohm at 10mA forward current and 100MHz. Maximum power dissipation is rated at 250 mW, with a junction temperature limit of 150°C.

RF Diode Feature Summary

• Silicon PIN diode construction optimized for high-speed RF signal switching
• Very low forward resistance to minimize insertion loss in active states
• Very low junction capacitance to ensure high isolation in passive states

RF Diode Applications

• RF switching circuits operating up to 3GHz
• High-speed signal routing in communication systems
• Attenuator and phase shifter components requiring low loss

RF Diode Procurement Notes

Verify the specific ordering suffix E6127 against official Infineon documentation to confirm package type and tape/reel specifications. Check component status as some distributors list this variant as discontinued; cross-reference availability with authorized channels to ensure authenticity and supply continuity.

RF Diode Selection Notes

Select this component when low insertion loss and high isolation are critical for frequencies approaching 3GHz. Ensure the design accommodates the 100 mA maximum forward current and 250 mW power dissipation limits. Verify that the 50V peak reverse voltage rating exceeds the circuit's maximum reverse bias requirements under all operating conditions.

RF Diode Part Context

This part belongs to the BAR63 series of RF PIN diodes from Infineon Technologies. These devices are engineered for compact surface-mount packages, such as SCD-80, providing reliable performance in space-constrained RF modules. The series is widely utilized in telecommunications infrastructure where consistent switching characteristics are required.

RF Diode Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Direct replacements must match the 50V reverse voltage, 100 mA current rating, and similar capacitance/resistance profiles to maintain circuit integrity without redesign.