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BAR 90-07LRH E6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 80V 250MW TSLP-4-7. Review the specifications below when checking this part for your BOM.
RF Diode specifications for BAR 90-07LRH E6327
- Description：RF DIODE PIN 80V 250MW TSLP-4-7
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Diode Type：PIN - 2 Independent
- Voltage - Peak Reverse (Max)：80V
- Current - Max：100 mA
- Capacitance @ Vr, F：0.35pF @ 1V, 1MHz
- Resistance @ If, F：800mOhm @ 10mA, 100MHz
- Power Dissipation (Max)：250 mW
- Operating Temperature：150°C (TJ)
- Package / Case：4-XFDFN
- Supplier Device Package：PG-TSLP-4-7
- Grade：-
- Qualification：-
RF Diode datasheet and documents for BAR 90-07LRH E6327
RF Diode Overview
The BAR 90-07LRH E6327 is a silicon deep trench PIN diode from the BAR90 series, manufactured by Infineon Technologies. It features an anti-parallel pair configuration in a leadless TSLP-4-7 package with 0.4 nH inductance. Key electrical parameters include a reverse voltage of 80 V and forward current of 100 mA. At 1 GHz and zero bias, capacitance is typically 0.19 pF. Forward resistance is 1.3 Ω at 3 mA. The device operates between -55°C and 125°C, with a junction temperature up to 150°C.
RF Diode Feature Summary
- Optimized for low bias current antenna switches in handheld applications
- Very low capacitance at zero volt reverse bias at frequencies above 1GHz
- Low forward resistance for improved ON/OFF mode harmonic distortion balance
RF Diode Applications
- Antenna switching in handheld devices
- RF signal routing
- Low power microwave circuits
RF Diode Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance and Pb-free status using official documentation. Check datasheet revision history for updates. Ensure storage conditions match specified ranges. Validate package marking against official layout guides.
RF Diode Selection Notes
Select this component for high-frequency RF applications requiring minimal parasitic capacitance. The anti-parallel design supports bidirectional signal handling. Evaluate thermal resistance requirements based on specific mounting conditions. Compare insertion loss and isolation metrics against system specifications at target operating frequencies.
RF Diode Part Context
This part belongs to the BAR90 series of silicon deep trench PIN diodes designed for mobile communication equipment. The series emphasizes low inductance and fast switching characteristics suitable for modern wireless standards. The E6327 suffix indicates specific packaging and marking configurations within the product line.
RF Diode Replacement Considerations
BAR 90-02LRH (single configuration)
RF Diode FAQ
What is the typical diode capacitance at 1 GHz?
The typical diode capacitance is 0.19 pF when measured at 0 V reverse bias and 1 GHz frequency.
What package type does the BAR 90-07LRH use?
It utilizes the TSLP-4-7 leadless package configuration.
What is the maximum junction temperature?
The maximum junction temperature is 150 °C.
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