BAR6306WH6327XTSA1

RF Diode Overview

The BAR6306WH6327XTSA1 is a silicon PIN diode from Infineon Technologies, packaged in PG-SOT-323. It features a dual common anode configuration designed for RF switching applications up to 3 GHz. Key electrical parameters include a peak reverse voltage of 50 V and a maximum forward current of 100 mA. The device exhibits low on-resistance of 1 Ohm at 10 mA and 100 MHz, with a capacitance of 0.3 pF at 5 V reverse bias and 1 MHz. Power dissipation is rated at 250 mW, operating within a temperature range of -55°C to +150°C junction temperature.

RF Diode Feature Summary

• Dual common anode PIN diode structure optimized for radio frequency switching
• Low series resistance and minimal capacitance for high-frequency signal integrity
• Silicon technology supporting extended thermal operation up to 150°C

RF Diode Applications

• RF switching circuits in wireless communication devices
• Antenna selection and switching modules
• Signal routing in mobile phone front-end assemblies

RF Diode Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches project requirements. Check datasheet revisions for any updates to mechanical dimensions or electrical characteristics. Ensure storage conditions comply with moisture sensitivity level specifications to prevent package damage during assembly processes.

RF Diode Selection Notes

Select this component for designs requiring compact RF switching solutions with low insertion loss. The PG-SOT-323 package suits space-constrained portable electronics. Evaluate thermal management needs against the 250 mW power dissipation limit. Consider the 50 V reverse voltage rating relative to circuit peak voltages to ensure reliable operation under all expected load conditions.

RF Diode Part Context

This part belongs to the BAR63 series of RF PIN diodes from Infineon Technologies. These components are engineered for high-speed switching in microwave and radio frequency applications. The series provides standardized performance metrics for impedance matching and signal isolation in modern telecommunication hardware architectures.

RF Diode Replacement Considerations

Public sources indicate this product is obsolete. Rochester Electronics LLC supplies market inventory as an alternative source. No direct functional substitute part numbers are explicitly confirmed in the provided documentation.