BAR6405WE6433HTMA1

RF Diode Overview

The BAR6405WE6433HTMA1 is a silicon PIN diode from Infineon Technologies, packaged in SOT-323. It features a common cathode configuration with a maximum reverse voltage of 150 V and a forward current rating of 100 mA. The device dissipates up to 250 mW and operates within a junction temperature range of -55 °C to 150 °C. Electrical characteristics include a capacitance of 0.35 pF at 20 V reverse bias and 1 MHz frequency, and a forward resistance of 1.35 Ω at 100 mA drive current and 100 MHz frequency.

RF Diode Feature Summary

• High-voltage current-controlled RF resistor suitable for attenuator and switch applications
• Operational frequency range spanning from above 1 MHz up to 6 GHz
• Very low capacitance at zero volt reverse bias for high-frequency performance
• Low forward resistance and very low signal distortion

RF Diode Applications

• RF attenuators
• RF switches
• Frequency range applications above 1 MHz up to 6 GHz

RF Diode Procurement Notes

This component has been officially discontinued by the manufacturer and is no longer in production. Verification of availability should focus on identifying parameter-equivalent replacement parts rather than sourcing the original model. Confirm that substitute components meet the required electrical specifications and package dimensions before implementation.

RF Diode Selection Notes

Selection requires evaluating the specific requirements for high-voltage RF switching or attenuation. Verify that the chosen component supports the necessary operating frequencies and maintains low capacitance levels. Ensure the thermal management strategy accommodates the specified power dissipation limits under expected load conditions.

RF Diode Part Context

The BAR6405WE6433HTMA1 belongs to the BAR64 series of silicon PIN diodes manufactured by Infineon Technologies. This series includes various configurations such as single, series, parallel pair, common anode, and common cathode setups across different packages like SOT-23 and SOT-323.

RF Diode Replacement Considerations

BAR6405WH6327XTSA1 is documented as a parameter-equivalent replacement part available from Infineon Technologies.

RF Diode FAQ

What is the typical capacitance value at zero volt reverse bias?

The typical capacitance at zero volt reverse bias is 0.17 pF at frequencies above 1 GHz.

What is the maximum junction temperature for this component?

The maximum junction temperature (Tj) is 150 °C.

Is this component qualified for automotive applications?

Yes, the component is qualified according to AEC-Q101 standards.