RF Diode BAR6406E6327HTSA1 product image

BAR6406E6327HTSA1

$0.11
  • Description:RF DIODE PIN 150V 250MW PG-SOT23
  • Series:-

SKU:8b7fbfc8a7fc Category: Brand:

  
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BAR6406E6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW PG-SOT23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6406E6327HTSA1

  • Description:RF DIODE PIN 150V 250MW PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):150V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6406E6327HTSA1

BAR6406E6327HTSA1

RF Diode Overview

The BAR6406E6327HTSA1 is a low signal distortion, surface mount RF PIN diode manufactured by Infineon Technologies. It features a common anode pair configuration in an industry-standard SOT-23-3 package (2.9 mm x 2.4 mm x 1 mm). The device is optimized for frequencies up to 3 GHz and includes a nominal 50 μm I-region width with a typical carrier lifetime of 1.55 μs. Key electrical parameters include a breakdown voltage of 150 V, a maximum forward current of 100 mA, and a total power dissipation of 250 mW. Capacitance is typically 0.22 pF at 0 V reverse bias, while forward resistance is approximately 2.3 Ω at 10 mA forward current.

RF Diode Feature Summary

  • Designed for low signal distortion applications requiring high RF voltage hold-off capabilities
  • Features very low capacitance and low forward resistance for efficient switching performance
  • Utilizes a cost-optimized silicon PIN structure with a 50 μm I-region width
  • Compliant with Pb-free, RoHS, and halogen-free manufacturing standards

RF Diode Applications

  • Low bias current RF switches
  • High-speed interface switches
  • RF attenuators
  • Wireless communication systems
  • High speed data networks

RF Diode Procurement Notes

Verify the component authenticity against the official Infineon datasheet specifications before integration. Confirm that the ordering suffix E6327HTSA1 matches the required reel packaging format. Ensure handling procedures account for the device's sensitivity to electrostatic discharge during assembly and storage processes.

RF Diode Selection Notes

Select this component when designing circuits operating at frequencies up to 3 GHz that require minimal signal distortion. The common anode pair topology is suitable for balanced switch configurations. Evaluate thermal constraints carefully, as the maximum junction temperature is limited to 150 °C under specified operating conditions.

RF Diode Part Context

This part belongs to the BAR64 series of RF PIN diodes from Infineon Technologies. It serves as a specialized solution for high-frequency switching applications where low insertion loss and high isolation are critical requirements. The specific marking PSs identifies the unit within the SOT-23-3 package family.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers or pin-compatible devices.

BAR6406E6327HTSA1BAR6406E6327HTSA1
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