RF Diode BAR6406WE6327HTSA1 product image

BAR6406WE6327HTSA1

  • Description:RF DIODE PIN 150V 250MW SOT323
  • Series:-

SKU:ec7ad5c34e16 Category: Brand:

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BAR6406WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW SOT323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6406WE6327HTSA1

  • Description:RF DIODE PIN 150V 250MW SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):150V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6406WE6327HTSA1

BAR6406WE6327HTSA1

RF Diode Overview

The BAR6406WE6327HTSA1 is a silicon PIN diode in the BAR64 series, housed in an SOT-323 package with a common anode configuration. It operates as a high-voltage current-controlled RF resistor for frequencies ranging from above 1 MHz up to 6 GHz. Key electrical parameters include a maximum reverse voltage of 150 V and a forward current rating of 100 mA. The device exhibits very low capacitance at zero volt reverse bias, typically 0.17 pF at frequencies above 1 GHz. Forward resistance is specified at 2.8 Ω maximum at 10 mA, and it features a carrier lifetime of 1550 ns.

RF Diode Feature Summary

  • Functions as a high-voltage current-controlled RF resistor suitable for attenuator and switch applications
  • Provides very low signal distortion across its operating frequency range
  • Features extremely low capacitance at zero volt reverse bias for high-frequency performance

RF Diode Applications

  • RF attenuators
  • RF switches
  • High-frequency circuit protection

RF Diode Procurement Notes

Verify the component against official Infineon datasheets to confirm exact specifications and compliance standards. Ensure that the ordering suffix matches the required packaging and marking configurations. Cross-reference part numbers with authorized distributors to validate authenticity and traceability before procurement.

RF Diode Selection Notes

Select this component when designing circuits requiring precise control over RF impedance through current modulation. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating temperature range. Evaluate the specific capacitance and isolation requirements against the target frequency band to ensure optimal signal integrity.

RF Diode Part Context

This part belongs to the BAR64 series of silicon PIN diodes manufactured by Infineon Technologies. The series includes various configurations such as single diodes, series pairs, and common cathode/anode arrangements. These components are designed for robust performance in RF applications, offering consistent electrical characteristics across different package types like SOT-23 and SOT-323.

RF Diode Replacement Considerations

BAR64-06W

RF Diode FAQ

What is the typical capacitance value at zero volt reverse bias?

The typical capacitance is 0.17 pF at frequencies above 1 GHz.

What is the maximum forward current rating?

The maximum forward current (IF) is rated at 100 mA.

Is this component qualified for automotive applications?

Yes, the BAR64 series is qualified according to AEC-Q101 standards.

BAR6406WE6327HTSA1BAR6406WE6327HTSA1

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