BAR8902LRHE6433XTMA1

RF Diode Overview

The BAR89-02LRH is a silicon PIN diode optimized for antenna switching in handheld applications. It features very low capacitance at zero volts reverse bias, typically 0.19 pF at frequencies above 1 GHz. The device offers low forward resistance, with a typical value of 0.8 Ω at IF = 10 mA, and ensures very low signal distortion. Maximum ratings include a diode reverse voltage (VR) of 80 V and a forward current (IF) of 100 mA. Total power dissipation is rated at 250 mW with a junction temperature limit of 150 °C. The component operates within an ambient temperature range of -55 °C to +125 °C.

RF Diode Feature Summary

• Optimized for antenna switching in handheld applications
• Very low capacitance at zero volts reverse bias at frequencies above 1 GHz
• Low forward resistance ensuring very low signal distortion

RF Diode Applications

• Antenna switches in handheld applications

RF Diode Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration files before procurement.

RF Diode Selection Notes

Select this component when designing RF front-ends requiring minimal insertion loss and high isolation at microwave frequencies. Ensure the operating frequency aligns with the specified capacitance and reverse parallel resistance characteristics for optimal performance.

RF Diode Part Context

This part belongs to the BAR89 series of silicon PIN diodes manufactured by Infineon Technologies. It utilizes a TSLP-2-7 leadless package designed for surface mount technology. The marking on the device body is 'R'.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.