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BAR9002ELE6327XTMA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 80V 250MW TSLP-2-19. Review the specifications below when checking this part for your BOM.
The BAR9002ELE6327XTMA1 is a single silicon RF PIN diode from Infineon Technologies, designed for high-voltage handling with low loss and distortion. It features a TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) with a 0402 footprint. Key electrical parameters include a maximum reverse voltage of 80 V, a forward current rating of 100 mA, and a total power dissipation of 250 mW. The device exhibits a typical capacitance of 0.23 pF at 1 GHz and a forward resistance of 1.6 Ω at 100 MHz. It operates within a temperature range of -55°C to 125°C.
Verify the component status before procurement as it may be marked as obsolete or not recommended for new designs. Confirm the specific ordering code matches the required package and tape/reel specifications. Ensure ESD handling precautions are observed during storage and assembly due to the sensitivity of the device.
Select this component for applications requiring high isolation and low insertion loss in RF signal paths. Consider the thermal resistance and junction temperature limits when designing for high-power dissipation scenarios. Verify that the operating frequency aligns with the specified AC characteristics for optimal performance.
This part belongs to the BAR90-02EL series of single silicon RF PIN diodes. It is manufactured by Infineon Technologies and packaged in the TSLP-2-19 leadless format. The product is Pb-free, RoHS compliant, and halogen-free, meeting environmental standards for modern electronic components.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential cross-references or updated product lines if this component is no longer suitable for new designs.
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