BAR90098LRHE6327XTSA1

$0.15

Description：RF DIODE PIN 80V 250MW TSLP-4-7
Series：-

SKU:3487699e4bea Category: RF Diodes Brand: Infineon Technologies

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Product introduction

BAR90098LRHE6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 80V 250MW TSLP-4-7. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR90098LRHE6327XTSA1

Description：RF DIODE PIN 80V 250MW TSLP-4-7
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Diode Type：PIN - 2 Independent
Voltage - Peak Reverse (Max)：80V
Current - Max：100 mA
Capacitance @ Vr, F：0.35pF @ 1V, 1MHz
Resistance @ If, F：800mOhm @ 10mA, 100MHz
Power Dissipation (Max)：250 mW
Operating Temperature：150°C (TJ)
Package / Case：4-XFDFN
Supplier Device Package：PG-TSLP-4-7
Grade：-
Qualification：-

RF Diode datasheet and documents for BAR90098LRHE6327XTSA1

BAR90098LRHE6327XTSA1

RF Diode Overview

The BAR90098LRHE6327XTSA1 is a silicon deep trench PIN diode from the BAR90 series, designed for low bias current antenna switching in handheld applications. It features an anti-parallel pair configuration within a leadless TSLP-4-7 package. Key electrical parameters include a reverse voltage of 80 V and a forward current rating of 100 mA. The device exhibits very low capacitance at zero volt reverse bias, typically 0.19 pF at 1 GHz. Forward resistance is specified at 1.3 Ω with a forward current of 3 mA. Operating temperature ranges from -55 °C to +125 °C.

RF Diode Feature Summary

Optimized for low bias current antenna switches in handheld applications
Very low capacitance at zero volt reverse bias at frequencies above 1 GHz
Low forward resistance for improved ON/OFF mode harmonic distortion balance

RF Diode Applications

Antenna switching in handheld devices
RF signal routing in mobile communication equipment
Low loss RF path control in wireless terminals

RF Diode Procurement Notes

Verify component authenticity by checking laser markings against datasheet specifications. Confirm package type matches TSLP-4-7 dimensions. Ensure storage conditions comply with moisture sensitivity levels. Validate RoHS compliance documentation prior to assembly. Cross-reference ordering suffixes with official Infineon documentation.

RF Diode Selection Notes

Select this component when low insertion loss and high isolation are required in RF paths. Consider the anti-parallel configuration for bidirectional signal handling. Evaluate thermal performance based on total power dissipation limits. Compare capacitance values across frequency bands for specific application needs.

RF Diode Part Context

This part belongs to the BAR90 series of silicon deep trench PIN diodes manufactured by Infineon Technologies. The series includes variants like BAR90-02LRH and BAR90-098LRH, differing primarily in package types and internal configurations. These components are engineered for high-frequency RF applications requiring minimal signal distortion.