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The BAS16WT1G is a small signal switching diode manufactured by onsemi. It features a single diode configuration housed in an SOD-523 surface-mount package. Key electrical parameters include a maximum repetitive peak reverse voltage of 100 V and a forward current rating of 200 mA. The device exhibits a peak reverse recovery time of 6 ns and a maximum forward voltage of 1.25 V at the rated current. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 200 mW.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the relevant datasheet before integration. Cross-reference the component marking code with the official identification guide to prevent counterfeit substitution during assembly processes.
Select this component when a compact, high-speed silicon junction diode is required for low-power switching tasks. The SOD-523 footprint offers a smaller alternative to larger packages while maintaining standard 200 mA current handling. Ensure the 100 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements.
This component belongs to onsemi's standard product portfolio of discrete semiconductors. It is part of the broader BAS16 series family, which provides reliable small-signal solutions for industrial and consumer electronics. The device utilizes standard silicon junction technology to deliver consistent performance across various environmental conditions.
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in recovery time or package dimensions. Verify pinout compatibility and thermal characteristics before substituting in existing designs.