Single Diodes BAS516,H3F product image

BAS516,H3F

$0.14
  • Description:DIODE STANDARD 100V 250MA ESC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:964739537e70 Category: Brand:

  
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BAS516,H3F is listed in the Single Diodes range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE STANDARD 100V 250MA ESC. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for BAS516,H3F

  • Description:DIODE STANDARD 100V 250MA ESC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):250mA
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):3 ns
  • Current - Reverse Leakage @ Vr:200 nA @ 80 V
  • Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:ESC
  • Operating Temperature - Junction:150°C (Max)
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for BAS516,H3F

BAS516,H3F

Single Diodes Overview

BAS516,H3F is a silicon epitaxial planar switching diode manufactured by Toshiba Semiconductor and Storage. It features a single configuration in an SOD-523-2 (USC) surface-mount package. Key electrical parameters include a peak reverse voltage of 100 V, a maximum forward current of 250 mA, and a surge current rating of 1 A. The device exhibits a fast recovery time of 3 ns and a low junction capacitance of 0.35 pF. Forward voltage is specified at 1.25 V with a reverse leakage current of 200 nA. Power dissipation is rated at 150 mW, and the operating temperature range spans from -55°C to +150°C.

Single Diodes Feature Summary

  • High-speed switching capability enabled by a 3 ns recovery time
  • Low parasitic capacitance for high-frequency signal integrity
  • Robust thermal performance supporting operation up to 150°C

Single Diodes Applications

  • High-speed signal switching circuits
  • Clamping applications in RF systems
  • Protection circuits requiring fast response times

Single Diodes Procurement Notes

Verify the specific suffix H3F against official Toshiba documentation to confirm RoHS compliance and lead-free status. Confirm that the USC package designation matches the required footprint for PCB layout. Ensure the component meets all environmental regulations applicable to the target market before finalizing procurement specifications.

Single Diodes Selection Notes

Select this component when a small-footprint switching diode with low capacitance is required. The 100 V reverse voltage rating provides sufficient margin for many low-voltage logic and signal lines. Consider the 250 mA average current limit for load requirements. The SOD-523-2 package offers space efficiency compared to larger through-hole alternatives.

Single Diodes Part Context

The BAS516 belongs to Toshiba's series of silicon epitaxial planar switching diodes. These components are designed for general-purpose high-speed switching tasks. The H3F suffix typically indicates environmental compliance attributes such as halogen-free materials. This part serves as a compact solution for modern electronics where board space is limited.

Single Diodes Replacement Considerations

Cross-reference with other manufacturers' BAS516 equivalents if supply constraints exist. Verify that substitute parts maintain identical pinout, package dimensions, and electrical characteristics such as recovery time and capacitance to ensure circuit compatibility.

BAS516,H3FBAS516,H3F
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