Single Diodes BAS85 L1G product image

BAS85 L1G

$0.11
  • Description:DIODE SCHOTT 30V 200MA MINI MELF
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d2cc73ff891f Category: Brand:

  
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BAS85 L1G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE SCHOTT 30V 200MA MINI MELF. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for BAS85 L1G

  • Description:DIODE SCHOTT 30V 200MA MINI MELF
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):5 ns
  • Current - Reverse Leakage @ Vr:2 µA @ 30 V
  • Capacitance @ Vr, F:10pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package:Mini MELF
  • Operating Temperature - Junction:125°C (Max)
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for BAS85 L1G

BAS85 L1G

Single Diodes Overview

The BAS85 L1G is a hermetically sealed glass fast switching Schottky barrier diode manufactured by Taiwan Semiconductor. It features a Mini-MELF package and offers a power dissipation of 200 mW with a repetitive peak reverse voltage of 30 V. The device supports an average forward rectified current of 200 mA and a peak forward surge current of 4 A. Key electrical characteristics include a maximum reverse current of 2 μA at 25 V and a junction capacitance of 10 pF at 1 MHz.

Single Diodes Feature Summary

  • Low forward voltage for improved efficiency
  • Hermetically sealed glass construction for reliability
  • Ideal for automated placement processes

Single Diodes Applications

  • Adapters
  • Switching power supplies
  • Inverters

Single Diodes Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity, as the L1G designation corresponds to a 2.5K reel configuration in official documentation. Ensure compliance requirements such as RoHS and halogen-free status are confirmed against the latest manufacturer datasheet before finalizing procurement specifications.

Single Diodes Selection Notes

Select this component for applications requiring low stored charge and high-speed switching capabilities within a Mini-MELF form factor. Consider the 30 V reverse voltage rating and 200 mA current capacity when designing circuits. The hermetically sealed glass package provides robust protection suitable for demanding environments compared to standard plastic packages.

Single Diodes Part Context

This part belongs to the BAS85 series of Schottky barrier diodes from Taiwan Semiconductor. The series utilizes a Mini-MELF case style designed for surface mount applications. The product line emphasizes low forward voltage and fast switching performance, targeting modern electronic designs where space constraints and efficiency are critical factors.

Single Diodes Replacement Considerations

Cross-reference with other Mini-MELF Schottky diodes offering similar 30 V ratings and 200 mA current capabilities. Verify pinout compatibility and thermal dissipation characteristics before substitution.

Single Diodes FAQ

What is the maximum junction temperature for the BAS85 L1G?

The maximum operating junction temperature range is -65 to +125 °C.

Does the BAS85 meet whisker test standards?

Yes, the device meets the JESD 201 class 1A whisker test requirement.

BAS85 L1GBAS85 L1G
$0.11
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