BAT1502LSE6433XTMA1

RF Diode Overview

The BAT1502LSE6433XTMA1 is a single silicon RF Schottky diode manufactured by Infineon Technologies. It features a low barrier N-type structure with an integrated on-chip guard ring for over-voltage protection. The device operates within a temperature range of -55 °C to +150 °C and supports a maximum reverse voltage of 4 V and forward current of 110 mA. Key electrical parameters include a typical junction capacitance of 0.2 pF at 0 V and 1 MHz, and a typical inductance of 0.2 nH. It is housed in the TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint.

RF Diode Feature Summary

• Low inductance design suitable for high-frequency applications up to 12 GHz
• Integrated on-chip guard ring provides over-voltage protection
• Leadless TSSLP-2-1 package enables compact board layouts

RF Diode Applications

• Mixers in LiDAR systems
• Detectors in Radar systems
• RF modules and embedded systems

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and lead-free status against the latest datasheet revision. Ensure ESD handling precautions are strictly followed during storage and assembly due to device sensitivity.

RF Diode Selection Notes

Select this component for ultra-low capacitance and inductance requirements in microwave mixer and detector circuits. Evaluate thermal resistance characteristics relative to the specific PCB layout and operating conditions to ensure power dissipation limits are not exceeded.

RF Diode Part Context

This part belongs to the BAT15-02LS series of single silicon RF Schottky diodes. It is designed specifically for high-frequency signal processing tasks where minimal parasitic effects are critical for maintaining signal integrity in modern communication and sensing architectures.

RF Diode Replacement Considerations

BAT1502ELE6327XTMA1 (BAT15-02EL) is a documented alternative featuring a TSLP-2-19 package.