RF Diode BAT1705WE6327HTSA1 product image

BAT1705WE6327HTSA1

  • Description:DIODE SCHOTTKY 4V 150MW SOT323-3
  • Series:-

SKU:5e8c7339855f Category: Brand:

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BAT1705WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 150MW SOT323-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1705WE6327HTSA1

  • Description:DIODE SCHOTTKY 4V 150MW SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:0.75pF @ 0V, 1MHz
  • Resistance @ If, F:15Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1705WE6327HTSA1

BAT1705WE6327HTSA1

RF Diode Overview

The BAT1705WE6327HTSA1 is a silicon Schottky diode from the BAT17 series, designed for mixer applications in the VHF/UHF range and high-speed switching. It features a dual common cathode configuration housed in an SOT-323 surface-mount package. Key electrical parameters include a maximum reverse voltage of 4 V, a forward current rating of 130 mA, and a total power dissipation of 150 mW. The device exhibits a typical junction-to-soldering point thermal resistance of 690 K/W and operates within a temperature range of -55°C to +125°C.

RF Diode Feature Summary

  • Dual common cathode configuration suitable for balanced mixer circuits
  • Optimized for low capacitance in VHF and UHF frequency ranges
  • Lead-free packaging compliant with RoHS standards

RF Diode Applications

  • Mixer applications in VHF/UHF range
  • High-speed switching applications

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number BAT1705WE6327HTSA1 with official Infineon documentation. Confirm that the SOT-323 package marking matches the specified type code 55s. Ensure supply chain sources provide valid traceability records consistent with automotive or industrial quality requirements.

RF Diode Selection Notes

Select this component when a dual Schottky diode with common cathode topology is required for RF mixing or fast switching. The SOT-323 package offers space efficiency compared to larger footprints. Consider the 4 V reverse voltage limit and 130 mA forward current capability against circuit load requirements before implementation.

RF Diode Part Context

This component belongs to the BAT17 family of silicon Schottky diodes manufactured by Infineon Technologies. The family includes variants such as BAT17-04, BAT17-06W, and BAT17-07, which differ in internal configuration (series, parallel, common anode) and package types like SOT-23 and SOT-143. The BAT1705WE6327HTSA1 specifically utilizes the SOT-323 form factor.

RF Diode Replacement Considerations

Direct substitutes within the same family include BAT17-04W (series configuration) or BAT17-06W (common anode), provided the circuit topology accommodates the different internal connection. Verify pinout compatibility and ensure the replacement maintains the required 4 V reverse voltage and 130 mA forward current ratings.

BAT1705WE6327HTSA1BAT1705WE6327HTSA1

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