BAT40V-7

Diode Arrays Overview

The BAT40V-7 is a surface mount Schottky barrier diode array manufactured by Diodes Incorporated. It features a dual common anode configuration within an SOT563 package. The device supports a peak repetitive reverse voltage of 40 V and a continuous forward current of 200 mA. Electrical characteristics include a maximum forward voltage of 1,000 mV at 200 mA and a reverse leakage current of 500 nA at 25 V. Thermal performance allows for 150 mW power dissipation with a junction-to-ambient thermal resistance of 833 °C/W. Operating temperatures range from -65°C to +125°C.

Diode Arrays Feature Summary

• Dual common anode Schottky barrier diode array
• PN junction guard ring for transient and ESD protection
• Qualified to AEC-Q101 standards for high reliability
• Totally lead-free and fully RoHS compliant

Diode Arrays Applications

• High-speed switching circuits
• Clamping applications in RF systems
• Protection against electrostatic discharge (ESD)
• Power supply rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3,000 units per reel. Confirm that the component meets the required environmental specifications, including halogen and antimony-free status. Ensure compatibility with standard SMD/SMT assembly processes and check for any recent product change notices regarding marking or material composition updates.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop and fast switching speed are required in a compact surface mount footprint. The dual common anode configuration is suitable for applications requiring two independent diodes sharing a common terminal. Consider the 40 V reverse voltage rating and 200 mA current capacity to ensure adequate headroom for the target circuit design.

Diode Arrays Part Context

This part belongs to the BAT40V series of surface mount Schottky barrier diode arrays. It utilizes the SOT563 case style, which provides an ultra-small footprint suitable for space-constrained designs. The device is constructed using silicon technology and is designed for general-purpose high-frequency applications.

Diode Arrays Replacement Considerations

BAT40V

Diode Arrays FAQ

What is the total capacitance of the BAT40V-7?

The total capacitance is typically 10 pF when measured at a reverse voltage of 1.0 V and a frequency of 1.0 MHz.

Does the BAT40V-7 have ESD protection capabilities?

Yes, the device incorporates a PN junction guard ring specifically designed to provide protection against transients and electrostatic discharge.

What is the reverse recovery time for this component?

The typical reverse recovery time is 5.0 ns under test conditions of IF = 10mA transitioning to IR = 1.0mA with a load resistance of 100Ω.