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The BAT54CW_R1_00001 is a silicon Schottky barrier diode manufactured by Panjit International Inc. It features a dual anode common cathode configuration housed in a surface-mount SOT-323-3 package. The device supports a maximum repetitive reverse voltage of 30 V and a forward current of 100 mA. Key electrical parameters include a maximum forward voltage of 600 mV, a peak forward surge current of 600 mA, and a reverse current of 2 uA. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55 C to +125 C.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm reel packaging specifications and tape dimensions. Ensure the ordering part number matches the required SOT-323-3 variant. Cross-reference datasheet revisions to confirm compliance with current environmental standards before finalizing procurement orders.
Select this component when a dual anode configuration is required within a minimal footprint. The SOT-323-3 package suits space-constrained designs. Verify that the 30 V reverse voltage rating aligns with the system's peak inverse voltage requirements. Confirm thermal management capabilities meet the 200 mW power dissipation limit under expected operating conditions.
This component belongs to the SSM-02TACC series of Schottky diodes produced by Panjit. It utilizes silicon planar technology optimized for surface mount assembly. The device is designed for high reliability in consumer electronics and industrial applications requiring efficient rectification in compact form factors.
Publicly confirmed substitute part numbers are not available in the provided source material.