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The BAT54SD is a Schottky barrier diode manufactured by Taiwan Semiconductor Corporation, housed in an SOT-363 surface mount package. It features a dual series configuration with two independent silicon diodes. Key electrical parameters include a maximum repetitive peak reverse voltage of 30 V and a continuous forward current rating of 200 mA per diode. The device exhibits a maximum forward voltage drop of 1 V at 100 mA and supports a non-repetitive peak forward surge current of 600 mA. Operating junction temperatures range from -65°C to +150°C.
Verify the specific ordering code (BAT54SD RFG) matches the required SOT-363 packaging and reel quantity specifications. Confirm compliance requirements such as RoHS and halogen-free status against project standards. Ensure thermal management aligns with the specified junction-to-ambient thermal resistance and power dissipation limits during operation.
Select this component when a dual-series Schottky topology is required within a small SOT-363 footprint. Compare its 30V rating and 200mA current capacity against alternative configurations like common cathode or common anode variants if pinout compatibility differs. Evaluate thermal performance under expected load conditions to ensure operation remains within the specified temperature range.
This part belongs to the BAT54T/AD/CD/SD/BR family of Schottky barrier diodes produced by Taiwan Semiconductor. The BAT54SD specifically denotes the dual series configuration variant within this lineup. All members share similar electrical characteristics but differ in internal pinning arrangements to suit various circuit design requirements.
Cross-reference with other manufacturers' BAT54SD equivalents ensuring identical SOT-363 packaging and series configuration. Verify matching electrical ratings including 30V reverse voltage and 200mA forward current capabilities before substitution.