BAT6307WE6327HTSA1

RF Diode Overview

The BAT6307WE6327HTSA1 is a silicon Schottky diode from the BAT63 series, manufactured by Infineon Technologies. It features a parallel pair configuration housed in an SOT-343 surface-mount package. The device operates with a maximum reverse voltage of 3 V and a forward current rating of 100 mA. Key electrical characteristics include a typical forward voltage of 190 mV at 1 mA and a diode capacitance of 0.65 pF at 0.2 V reverse bias. It supports junction temperatures up to 150 °C and complies with RoHS standards.

RF Diode Feature Summary

• Designed as a low barrier detector diode suitable for applications operating up to GHz frequencies
• Optimized for high-speed signal processing tasks requiring rapid switching capabilities
• Functions effectively as a zero bias detector diode without requiring external power sources

RF Diode Applications

• RF detector circuits operating at microwave frequencies
• High-speed switching applications in communication systems
• Zero bias detection modules in RF front-end designs

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required package and marking specifications. Ensure compliance with handling precautions for electrostatic discharge sensitive devices during storage and assembly processes.

RF Diode Selection Notes

Select this component when a parallel pair Schottky configuration is required within a compact SOT-343 footprint. Consider its low forward voltage and minimal capacitance for high-frequency signal integrity. Evaluate thermal resistance limits against the expected power dissipation requirements of the target circuit design.

RF Diode Part Context

This part belongs to the BAT63 series of silicon Schottky diodes produced by Infineon Technologies. The series includes variants such as the BAT63-02V in SC79 packaging. These components are engineered specifically for detector and high-speed switching roles in modern electronic systems.

RF Diode Replacement Considerations

Direct substitutes within the same series include the BAT63-02V, though it utilizes a different SC79 package. Verify pin compatibility and thermal performance before implementing any cross-package replacements in existing layouts.

RF Diode FAQ

What is the typical diode capacitance value?

The typical diode capacitance is 0.65 pF, measured at a reverse voltage of 0.2 V and a frequency of 1 MHz.

How does the forward voltage vary with temperature?

Forward current increases as temperature rises; graphs indicate higher forward current capability at elevated junction temperatures compared to room temperature conditions.

Is this component lead-free?

Yes, the BAT6307WE6327HTSA1 is provided in a Pb-free package that is compliant with RoHS regulations.