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The BAT6404E6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a dual series configuration with a maximum repetitive reverse voltage of 40 V and a forward current rating of 250 mA. The device exhibits a low forward voltage of 570 mV and a maximum reverse leakage current of 2 uA. It supports a forward surge current of 800 mA and operates within a temperature range of -55°C to +150°C. With a power dissipation of 250 mW and AEC-Q100 qualification, it is designed for robust electronic applications.
Verify the complete part number including suffixes against official Infineon documentation to ensure correct packaging and automotive grade specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Cross-reference ordering information directly with authorized distributors to avoid counterfeit components. Ensure storage conditions align with moisture sensitivity level requirements specified in the product data sheet.
Select this component when a compact dual series Schottky solution is required for low-voltage applications. The SOT-23-3 package suits space-constrained designs. Verify that the 40 V reverse voltage rating exceeds the circuit's peak inverse voltage. Consider the 250 mA forward current limit for load requirements. The AEC-Q100 qualification makes it suitable for automotive environments requiring high reliability.
This component belongs to the BAT64 series of Schottky diodes from Infineon Technologies. The series offers various configurations including single and dual setups in small surface-mount packages. These devices are engineered for fast switching and low power loss. The specific model integrates automotive quality standards into a standard industrial form factor.
Consult official Infineon substitution guides for verified alternatives. Generic equivalents may not match the AEC-Q100 qualification or specific electrical tolerances.