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The BAT6405E6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 40 V and a forward current rating of 250 mA. The device exhibits a low forward voltage of 570 mV and a maximum reverse leakage current of 2 uA. It supports a forward surge current of 800 mA and operates within a temperature range of -55°C to +150°C. The component is qualified under AEC-Q100 standards for automotive applications.
Verify the complete part number including the suffix HTSA1 to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q100 qualification aligns with specific automotive project requirements. Check for any recent production changes or obsolescence notices directly from Infineon before finalizing procurement plans.
Select this component when a dual Schottky diode in a small SOT-23-3 package is required for high-speed switching or RF applications. The 40 V reverse voltage rating suits low-voltage logic interfaces. Ensure the circuit design accommodates the 250 mA continuous forward current limit and the thermal constraints of the SMD package.
This part belongs to the BAT64 series of Schottky barrier rectifiers designed for high-frequency applications. The E6327 suffix indicates specific packaging and ordering details managed by Infineon. It serves as a standard solution for signal processing tasks requiring fast recovery and low capacitance characteristics in portable electronics.
BAT6405E6327XT is a verified substitute offering identical electrical characteristics and pinout compatibility within the same product family.